4N35-X, 4n36-x, 4n37-x, 4n38 www.vishay.com vishay semiconductors rev. 1.8, 16-jan-12 1 document number: 83717 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 optocoupler, phototransistor output, with base connection description this datasheet presents five families of vishay industry standard single channel phot otransistor couplers. these families include the 4n35, 4n36, 4n37, 4n38 couplers. each optocoupler consists of gallium arsenide infrared led and a silicon npn phototransistor. these couplers are underwriters laboratories (ul) listed to comply with a 5000 v rms isolation test voltage. this isolation performance is accomplished through vishay double molding isolation manufacturing process. comliance to din en 60747-5-5 partial di scharge isolation specification is available for these families by ordering option 1. these isolation processes and the vishay iso9001 quality program results in the highest isolation performance available for a commecial plastic ph ototransistor optocoupler. the devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. note ? for additional design inform ation see application note 45 normalized curves features ? isolation test voltage 5000 v rms ? interfaces with common logic families ? input-output coupling capacitance < 0.5 pf ? industry standard dual-in-line 6 pin package ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? ac mains detection ? reed relay driving ? switch mode power supply feedback ? telephone ring detection ? logic ground isolation ? logic coupling with high frequency noise rejection agency approvals ? ul file no. e52744 (pending) ? cul tested to csa 22.2 bulletin 5a ? din en 60747-5-2 (vde 0884)/din en 60747-5-5 (pending), available with option 1 ? bsi: en 60065, en 60950-1 ?fimko ?cqc notes ? additional options may be possibl e, please contact sales office. (1) also available in tubes; do not put t on end. 1 2 3 6 5 4 b c e a c nc i179004-14 ordering information 4n3x-x0##t part number package option tape and reel agency certified/package ctr (%) 10 ma 20 ma ul, cul, bsi, fimko 100 20 dip-6 4N35-X000 4n36-x000 4n37-x000 4n38 dip-6, 400 mil, option 6 4N35-X006 - 4n37-x006 - smd-6, option 7 4N35-X007t (1) 4n36-x007 4n37-x007 4n38-x007t (1) smd-6, option 9 4N35-X009t (1) 4n36-x009t (1) 4n37-x009 4n38-x009t vde, ul, cul, bsi, fimko 100 20 dip-6 4N35-X001 - 4n37-x001 - dip-6, 400 mil, option 6 4N35-X016 - - - smd-6, option 7 4N35-X017t (1) --- smd-6, option 9 4N35-X019t - - - 7.62 mm 10.16 mm > 8 mm 8 mm typ. option 7 option 6 option 9 dip-6
4N35-X, 4n36-x, 4n37-x, 4n38 www.vishay.com vishay semiconductors rev. 1.8, 16-jan-12 2 document number: 83717 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? stresses in excess of the abso lute maximum ratings can cause permanent damage to the device. functional operation of the devic e is not implied at these or any other conditions in excess of those give n in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (1) refer to reflow profile for soldering conditions for surface mount ed devices (smd). refer to wave profile for so ldering conddit ions for through hole devices (dip). absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input reverse voltage v r 6v forward current i f 60 ma surge current t 10 s i fsm 2.5 a power dissipation p diss 70 mw output collector emitter breakdown voltage v ceo 70 v emitter base breakdown voltage v ebo 7v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma output power dissipation p diss 150 mw coupler isolation test voltage t = 1 s v iso 5000 v rms creepage distance 7mm clearance distance 7mm isolation thickness between emitter and detector 0.4 mm comparative tracking index d in iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c soldering temperature (1) 2 mm from case, 10 s t sld 260 c electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit input forward voltage (1) i f = 10 ma v f 1.2 1.5 v i f = 10 ma, t amb = - 55 c v f 0.9 1.3 1.7 v reverse current (1) v r = 6 v i r 0.1 10 a capacitance v r = 0 v, f = 1 mhz c o 25 pf output collector emitter breakdown voltage (1) i c = 1 ma 4n35 bv ceo 30 v 4n36 bv ceo 30 v 4n37 bv ceo 30 v 4n38 bv ceo 80 v emitter collector breakdown voltage (1) i e = 100 a bv eco 7v collector base breakdown voltage (1) i c = 100 a, i b = 1 a 4n35 bv cbo 70 v 4n36 bv cbo 70 v 4n37 bv cbo 70 v 4n38 bv cbo 80 v
4N35-X, 4n36-x, 4n37-x, 4n38 www.vishay.com vishay semiconductors rev. 1.8, 16-jan-12 3 document number: 83717 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? minimum and maximum values are testing requirements. typical valu es are characteristics of the device and are the result of en gineering evaluation. typical values are for information only and are not part of the testing requirements. (1) indicates jedec registered value. note (1) indicates jedec re gistered values. note (1) indicates jedec re gistered values. fig. 1 - test circuit, non-saturate d operation fig. 2 - switching times output collector emitter leakage current (1) v ce = 10 v, i f = 0 4n35 i ceo 550na 4n36 i ceo 550na v ce = 10 v, i f = 0 4n37 i ceo 550na v ce = 60 v, i f = 0 4n38 i ceo 50 na v ce = 30 v, i f = 0, t amb = 100 c 4n35 i ceo 500 a 4n36 i ceo 500 a 4n37 i ceo 500 a v ce = 60 v, i f = 0, t amb = 100 c 4n38 i ceo 6a collector emitter capacitance v ce = 0 c ce 6pf coupler resistance, input output (1) v io = 500 v r io 10 11 capacitance, input output f = 1 mhz c io 0.5 pf current transfer ratio (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit i c /i f (1) v ce = 10 v, i f = 10 ma 4n35 ctr dc 100 % 4n36 ctr dc 100 % 4n37 ctr dc 100 % v ce = 10 v, i f = 20 ma 4n38 ctr dc 20 % v ce = 10 v, i f = 10 ma, t a = - 55 c to + 100 c 4n35 ctr dc 40 50 % 4n36 ctr dc 40 50 % 4n37 ctr dc 40 50 % 4n38 ctr dc 30 % switching characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit turn-on time (1) v cc = 5 v, i c = 2 ma, r l = 100 t on 10 s turn-off time (1) v cc = 5 v, i c = 2 ma, r l = 100 t off 10 s electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit channel i channel ii 95 10804-3 r g = 50 t p t p = 50 s t = 0.01 + 5 v i f 0 50 r l i f oscilloscope r l = 1 m c l = 20 pf t p t t 0 0 10 % 90 % 100 % t r t d t on t s t f t off i f i c t p pulse duration t d delay time t r rise time t on (= t d + t r ) turn-on time t s storage time t f fall time t off (= t s + t f ) turn-off time 96 11698
4N35-X, 4n36-x, 4n37-x, 4n38 www.vishay.com vishay semiconductors rev. 1.8, 16-jan-12 4 document number: 83717 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - forward voltage vs. forward current fig. 4 - collector current vs. collector emitter voltage (ns) fig. 5 - collector current vs. collector emitter voltage (sat) fig. 6 - leakage current vs. ambient temperature fig. 7 - normalized ctr (n s) vs. ambient temperature fig. 8 - normalized ctr (sat) vs. ambient temperature 0.6 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.8 0.1 1 10 100 i f - forward current (ma) v f - forward voltage (v) t amb = - 55 c 1.5 0.7 t amb = - 40 c t amb = 100 c t amb = 75 c t amb = 50 c t amb = 25 c t amb = 0 c t amb = - 25 c 1.6 1.7 0 20 30 40 50 60 01 78 v ce - collector emitter voltage (n s ) (v) i c - collector current (ma) 10 6 5 4 3 2 i f = 20 ma i f = 15 ma i f = 10 ma i f = 30 ma i f = 5 ma 0 10 15 20 25 00.4 v ce - collector emitter voltage ( s at) (v) i c - collector current (ma) 5 0.3 0.2 0.1 i f = 10 ma i f = 25 ma i f = 5 ma i f = 2 ma i f = 1 ma 0.001 0.01 0.1 10 1 100 1000 10 000 - 60 100 t amb - ambient temperature (c) i ce0 - leakage current (na) v ce = 40 v - 40 80 60 40 20 0 - 20 i f = 0 ma v ce = 12 v v ce = 24 v 0 0.2 0.6 0.4 0.8 1.0 1.2 - 60 100 t amb - ambient temperature (c) ctr norm - normalized ctr (n s ) - 40 80 60 40 20 0 - 20 i f = 5 ma i f = 10 ma i f = 1 ma v ce = 5 v 0 0.2 0.6 0.4 0.8 1.0 1.2 - 60 100 t amb - ambient temperature (c) ctr norm - normalized ctr ( s at) - 40 80 60 40 20 0 - 20 i f = 5 ma i f = 10 ma i f = 1 ma v ce = 0.4 v
4N35-X, 4n36-x, 4n37-x, 4n38 www.vishay.com vishay semiconductors rev. 1.8, 16-jan-12 5 document number: 83717 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - normalized ctr (ns) vs. forward current fig. 10 - normalized ctr (sat) vs. forward current fig. 11 - ctr frequency vs. phase angle fig. 12 - ctr frequenc y vs. collector current fig. 13 - switching time vs. load resistance 0 0.2 0.6 0.4 0.8 1.0 1.2 0.1 100 i f - forward current (ma) ctr norm - normalized ctr (n s ) 110 t amb = - 55 c t amb = - 40 c t amb = 0 c t amb = 25 c t amb = 50 c t amb = 75 c t amb = 100 c v ce = 5 v 0 0.2 0.6 0.4 0.8 1.0 1.2 0.1 100 i f - forward current (ma) ctr norm - normalized ctr ( s at) 110 t amb = - 55 c t amb = - 40 c t amb = 0 c t amb = 25 c t amb = 50 c t amb = 75 c t amb = 100 c v ce = 0.4 v - 160 - 140 - 60 - 40 0 1 1000 f - fre q uency (khz) pha s e (deg) - 20 10 100 v ce = 5 v - 80 - 100 - 120 1 10 1000 0.1 100 i c - collector current (ma) f ctr - ctr fre q uency (khz) 100 110 v cc = 5 v 0.1 1 10 1000 0.1 100 r l - load re s i s tance (k ) t on , t off - s witching time ( s ) 100 110 v ce = 5 v, i f = 10 ma t on t off
4N35-X, 4n36-x, 4n37-x, 4n38 www.vishay.com vishay semiconductors rev. 1.8, 16-jan-12 6 document number: 83717 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters package marking notes ? vde logo is only marked on option 1 parts. option information is no t marked on the part. ? tape and reel suffix (t) is not part of the package marking. 22530 0.26 3.5 0.3 7.62 0.3 0.5 0.1 2.54 0.25 3.3 0.5 6.5 0.5 7.3 0.5 7.62 to 9.98 1.1 0.1 0.5 typ. 2.8 0.5 20802-34 10.16 typ. 7.62 typ. option 6 8 min. 7.62 typ. 3.5 0.3 0.6 min. 10.3 max. 0.35 0.25 option 7 option 9 7.62 typ. 0.6 min. 0.1 0.1 3.5 0.3 3.5 0.3 0.1 min. 2.7 min. 8.16 0.8 10.16 0.3 2.54 r 0.25 1.78 0.76 1.52 8 min. 11.05 2.54 r 0.25 1.78 0.76 1.52 8 min. 11.05 4n36 v yww 25
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